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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET(R) Power MOSFET
IRF3707Z IRF3707ZS IRF3707ZL
Qg
9.7nC
PD - 95812A
VDSS RDS(on) max
30V 9.5m:
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
TO-220AB IRF3707Z
D2Pak IRF3707ZS
TO-262 IRF3707ZL
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V
Max.
30
Units
V A
g @ 10V g
20 59i 42i 230 57 28 0.38 -55 to + 175 300 (1.6mm from case) 10 lbfxin (1.1 Nxm) W/C C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Typ.
Max.
2.653 --- 62 40
Units
C/W
eA
e
--- 0.50 --- ---
Junction-to-Ambient (PCB Mount)
h
Notes through are on page 12
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1
12/4/03
IRF3707Z/S/L
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 81 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.023 7.5 10 1.80 -5.3 --- --- --- --- --- 9.7 2.8 1.0 3.4 2.5 4.4 6.2 9.8 41 12 3.6 1210 260 130 --- --- 9.5 12.5 2.25 --- 1.0 150 100 -100 --- 15 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 17A S nA V mV/C A V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 21A VGS = 4.5V, ID = 17A
e e
VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 17A
See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 17A Clamped Inductive Load
e
= 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 40 23 5.7 Units mJ A mJ
--- --- --- --- --- --- --- --- 14 5.2
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
59i A 230 1.0 21 7.8 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V TJ = 25C, IF = 17A, VDD = 15V di/dt = 100A/s
e
e
2
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IRF3707Z/S/L
1000
TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
1000
TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
30V 10
10
3.0V
1 0.1 1
30s PULSE WIDTH Tj = 25C 10
1 0.1 1
30s PULSE WIDTH Tj = 175C 10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID, Drain-to-Source Current ()
ID = 42A VGS = 10V
1.5
T J = 25C 100 T J = 175C
1.0
10.0 2 3 4
VDS = 10V 30s PULSE WIDTH 5 6 7 8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF3707Z/S/L
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
6.0 ID= 17A
VGS, Gate-to-Source Voltage (V)
5.0 4.0 3.0 2.0 1.0 0.0
10000
C, Capacitance(pF)
VDS= 24V VDS= 15V
1000
Ciss Coss
100
Crss
10 1 10 100
0
2
4
6
8
10
12
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.00 T J = 175C T J = 25C
10.00
ID, Drain-to-Source Current (A)
100
10
100sec
1.00
1msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10msec
0.10 VGS = 0V 0.0 0.5 1.0 1.5 2.0
0.01
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF3707Z/S/L
60 50
ID, Drain Current (A)
2.5
Limited By Package
VGS(th) Gate threshold Voltage (V)
2.0
40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
ID = 250A
1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3
0.1
Ri (C/W) i (sec) 1.163 0.000257 1.073 0.419 0.001040 0.003089
1
2
0.01
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3707Z/S/L
15V
175
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
150 125 100 75 50 25 0 25 50 75 100
ID 4.5A 6.8A BOTTOM 23A TOP
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
125
150
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy vs. Drain Current
I AS
LD VDS
Fig 12b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
90%
VGS
3mA
VDS
IG
ID
10%
Current Sampling Resistors
VGS
td(on) tr td(off) tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRF3707Z/S/L
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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IRF3707Z/S/L
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by;
* P =P loss conduction + P drive + P output
P = Irms x Rds(on) loss
+ (Qg x Vg x f )
(
2
)
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q1.
Ploss = (Irms x Rds(on ) )
2
Qgs 2 Qgd +Ix x Vin x f + I x x Vin x ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2
f
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage.
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
8
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IRF3707Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
For GB Production
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP GPUA8P9@
96U@A8P9@
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9
D2Pak Package Outline
IRF3707Z/S/L
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
For GB Production
Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG Q6SUAIVH7@S A$"T 96U@A8P9@
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA
DIU@SI6UDPI6G S@8UDAD@S GPBP GPUA8P9@
10
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IRF3707Z/S/L
S @ 7 H V I A U S 6 Q
2- COLLECTOR IGBT 1- GATE
@ 9 P 8 A @ U 6 9
& ( ( A 2 A & A S 6 @
( A F @ @ X
8 A @ DI G
TO-262 Part Marking Information
G 6 I P D U 6 I S @ U DI
S @ D DA U 8 @ S & ( ( A ( A X X A I P A 9 @ G 7 H @ T T 6 G " " G DS A I 6 A T D A DT C U ) @ G Q H 6 Y @ ( ' & A @ 9 P 8 A U P G
P B P G
G 7 H @ T T 6
@ 9 P 8 A U P G
Dimensions are shown in millimeters (inches)
TO-262 Package Outline
A 8 A A @ I DG A G 7 H @ T T 6 A @ C U A DI
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11
IRF3707Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Notes: Repetitive rating; pulse width limited by This is only applied to TO-220AB pakcage. max. junction temperature. This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering Starting TJ = 25C, L = 0.15mH, RG = 25, techniques refer to application note #AN-994. IAS = 23A. Calculated continuous current based on maximum allowable Pulse width 400s; duty cycle 2%. junction temperature. Package limitation current is 42A. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
12
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/03
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